PART |
Description |
Maker |
M58LW064D 8938 |
64 MBIT(8MB X8, 4MB X16, UNIFORM BLOCK)3V SUPPLY FLASH MEMORY From old datasheet system
|
STMicroelectronics
|
M29DW640D70N1T M29DW640D70ZA1E M29DW640D70N6 M29DW |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
|
ST Microelectronics
|
M29W640DB90N6E M29W640DT70N1T |
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory 64 MBIT (8MB X8 OR 4MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
STMicroelectronics ST Microelectronics
|
HSDL-1100008 HSDL-1100018 HSDL-1100007 HSDL-110001 |
IrDA 1.1 Compliant 4Mb/s 5V Transceiver. Top Option.Tape & ReelLINot Recommended for New Designs) IrDA 1.1Compliant 4Mb/s 5V Transceiver. Top Opt. 10 units/stripLINot Recommended for New Designs) IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Option.Tape & Reel<LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Option.Tape IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Opt.10 units/strip<LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Opt.10单位/条\u0026lt;LI\u0026gt;(不推荐用于新设计)
|
Ecliptek, Corp.
|
GS74116U-8 GS74116J-10I GS74116TP-12I |
8ns 256K x 16 4Mb asynchronous SRAM 10ns 256K x 16 4Mb asynchronous SRAM 12ns 256K x 16 4Mb asynchronous SRAM
|
GSI Technology
|
GS842Z18AB-166 GS842Z18AB-166I GS842Z18AB-180 GS84 |
4Mb NBT SRAMs 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
GS74108AX-7 GS74108AX-7I GS74108AJ-7I GS74108ATP-1 |
7ns 512K x 8 4Mb asynchronous SRAM 10ns 512K x 8 4Mb asynchronous SRAM
|
GSI Technology
|
M29F032D M29F032D70 7946 M29F032D70N1 M29F032D70N1 |
32 MBIT (4MB X8, UNIFORM BLOCK) 5V SUPPLY FLASH MEMORY 32 Mbit 4Mb x8 / Uniform Block 5V Supply Flash Memory 32 MBIT (4MB X8, UNIFORM BLOCK) 5V SUPPLY FLASH MEMORY 32 Mbit 4Mb x8 Uniform Block 5V Supply Flash Memory From old datasheet system
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))
|
http:// GSI Technology, Inc.
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